unisonic technologies co., ltd 9N90 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-217.e 900v n-channel mosfet ? description the utc 9N90 uses utc?s advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 1.4 ? @ v gs = 10 v * ultra low gate charge ( typical 45 nc ) * low reverse transfer capacitance ( c rss = typical 14 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain to-3p 1 1 to-247 1 to-220f1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 9N90l-t47-t 9N90g-t47-t to-247 g d s tube 9N90l-t3p-t 9N90g-t3p-t to-3p g d s tube 9N90l-tf1-t 9N90g-tf1-t to-220f1 g d s tube
9N90 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-217.e ? absolute maximum rating (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 900 v gate-source voltage v gss 30 v continuous drain current (t c = 25c) i d 9.0 a pulsed drain current (note 2) i dm 36 a avalanche current (note 2) i ar 9.0 a single pulsed(note 3) e as 900 mj avalanche energy repetitive(note 2) e ar 28 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns to-247 160 w to-3p 240 power dissipation to-220f1 36 w to-247 1.28 w/c to-3p 2.22 linear derating factor above t c = 25c to-220f1 p d 0.288 w/c junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width lim ited by maximum junction temperature 3. l = 21mh, i as = 9.0a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 9.0a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit to-247 50 c/w to-3p 40 junction to ambient to-220f1 ja 62.5 c/w to-247 0.78 c/w to-3p 0.52 junction-to-case to-220f1 jc 3.47 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 900 v drain-source leakage current i dss v ds = 900 v, v gs = 0 v 10 a forward i gssf v gs = 30 v, v ds = 0 v 100 na gate-body leakage current reverse i gssr v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d = 250 a, referenced to 25c 0.99 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v static drain-source on-resistance r ds(on) v gs = 10 v, i d = 4.5 a 1.12 1.4 ? dynamic parameters input capacitance c iss 2100 2730 pf output capacitance c oss 175 230 pf reverse transfer capacitance c rss v ds = 25 v, v gs = 0 v, f = 1.0 mhz 14 18 pf
9N90 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-217.e ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit switching characteristics turn-on delay time t d(on) 50 110 ns turn-on rise time t r 120 250 ns turn-off delay time t d(off) v dd = 450v, i d =11.0 a, r g = 25 ? (note 1, 2) 100 210 ns turn-off fall time t f 75 160 ns total gate charge q g 45 58 nc gate-source charge q gs 13 nc gate-drain charge q gd v ds = 720v, i d = 11.0a, v gs = 10 v (note 1,2) 18 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s = 9.0 a 1.4 v maximum continuous drain-source diode forward current i s 9.0 a maximum pulsed drain-source diode forward current i sm 36 a reverse recovery time t rr 550 ns reverse recovery charge q rr v gs = 0 v, i s = 9.0 a, d if / dt = 100 a/ s (note 1) 6.5 c notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
9N90 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-217.e ? test circuit fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
9N90 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-217.e ? test circuit(cont.)
9N90 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-217.e ? typical characteristics utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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